Substrate processing apparatus and semiconductor device producing method

   
   

Emissivity of a substrate is measured at least before the substrate is heated, heating operation of the substrate is controlled under a heating condition corresponding to the emissivity, and the substrate is processed.

Измерена лучеиспускаемость субстрата по крайней мере прежде чем субстрат нагрет, деятельность топления субстрата controlled под условием топления соответствуя к лучеиспускаемости, и субстрат обработан.

 
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