The present invention provides a hydrogen barrier layer able to prevent
diffusions of hydrogen into a capacitor and a method for fabricating a
semiconductor device having the same. The inventive method includes the
steps of: depositing a zirconium-titanium oxide layer containing
zirconium, titanium and oxygen on a substrate; and performing a reforming
process for densifying the zirconium-titanium oxide layer and for stuffing
oxygen in a surface of the zirconium-titanium oxide layer.
