A structure and method of forming a fully planarized polymer thin-film
transistor by using a first planar carrier to process a first portion of
the device including gate, source, drain and body elements. Preferably,
the thin-film transistor is made with all organic materials. The gate
dielectric can be a high-k polymer to boost the device performance. Then,
the partially-finished device structures are flipped upside-down and
transferred to a second planar carrier. A layer of wax or photo-sensitive
organic material is then applied, and can be used as the temporary glue.
The device, including its body area, is then defined by an etching
process. Contacts to the devices are formed by conductive material
deposition and chemical-mechanical polish.
