Pressure contact type semiconductor device having dummy segment

   
   

Each of outermost segments (OMSG) and innermost segments (IMSG) is utilized as a dummy segment. A top surface of a protruding portion (OMPP, IMPP) of each of the outermost segments (OMSG) and the innermost segments (IMSG) is covered with an insulating layer (1S+1P), and a clearance (CL) is provided between a top surface of the insulating layer (1S+1P) and a bottom surface (2BS) of a cathode strain relief plate. Each of all the other segments (SG) than the outermost and innermost segments has a protruding portion PP on which a cathode electrode (1K-AL) is formed. A thickness (T1) of the cathode electrode (1K-AL) is determined so as to allow a top surface of the cathode electrode (1K-AL) to be in contact with the bottom surface (2BS) of the cathode strain relief plate.

Каждый из outermost этапов (OMSG) и innermost этапов (IMSG) использовано как думмичный этап. Верхняя поверхность выступая части (OMPP, IMPP) каждого из outermost этапов (OMSG) и innermost этапов (IMSG) предусматривана с изолируя слоем (1S+1P), и зазором (CL) обеспечена между верхней поверхностью изолируя слоя (1S+1P) и нижней поверхностью (2BS) плиты сброса напряжения катода. Каждый из всех других этапов (SG) чем outermost и innermost этапы имеет выступая часть pp на сформирован электрод катода (1K-AL). Обусловлены, что позволяет толщина (t1) электрода катода (1K-AL) верхнюю поверхность электрода катода (1K-AL) быть in contact with нижняя поверхность (2BS) плиты сброса напряжения катода.

 
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