Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode

   
   

A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.

Метод вакуума обрабатывая вклюает устанавливать статью, котор нужно обрабатывать в контейнере реакции и одновременно поставлять по крайней мере 2 высокочастотной энергии имея взаимно по-разному частоты до по крайней мере один высокочастотный электрод для того чтобы произвести плазму в контейнере реакции высокочастотными энергиями введенными в контейнер реакции от высокочастотного electrode(s), таким образом обрабатывая статью. Частоты и значения силы по крайней мере 2 поставленных высокочастотных энергий удовлетворяют необходимы отношения.

 
Web www.patentalert.com

< Method of manufacturing electro-optical device, electro-optical device, and electronic apparatus

< Method for creating thick oxide on the bottom surface of a trench structure in silicon

> Process for preparation of a salt-like chemical compound and its use in catalyst systems for preparing polyolefins

> Printed circuit board with wiring pattern formed thereon by screen printing and process for manufacturing the same

~ 00165