An oriented ferroelectric thin-film device includes a substrate, a
conductive thin-film disposed on the substrate, and a ferroelectric
thin-film disposed on the conductive thin-film, wherein the conductive
thin-film comprises a polycrystalline conductive material, the
ferroelectric thin-film comprises a Pb-containing perovskite oxide and
includes a first ferroelectric sub-layer and a second ferroelectric
sub-layer, the first ferroelectric sub-layer is disposed on the conductive
thin-film and has a composition changing in the thickness direction, and
the second ferroelectric sub-layer is disposed on the first ferroelectric
sub-layer and has a constant composition. The ferroelectric thin-film is
oriented in a uniaxial direction such that the c-axis is perpendicular to
the substrate. A method for manufacturing the oriented ferroelectric
thin-film device includes the steps of forming a polycrystalline
conductive thin-film on a substrate, and forming a ferroelectric thin-film
on the polycrystalline conductive thin-film.
