A semiconductor device includes: a substrate; an n-type semiconductor layer
over the substrate, the n-type semiconductor layer having a planar top
surface; a p-type semiconductor layer extending over a major portion of
the n-type semiconductor layer and not extending over an exposed region of
the n-type semiconductor layer located adjacent to at least one edge of
the planar top surface of the n-type semiconductor layer; a first bonding
pad provided on the exposed region of the n-type semiconductor layer; an
electrode layer extending over the p-type semiconductor layer; and a
second bonding pad on the electrode layer, the bonding pad including a
central region for securing an electrical interconnect, and at least one
finger-like region protruding from the central region, the finger-like
region having a length extending away from the central region and a width
that is substantially less than the length. A method for producing a
semiconductor device also is described.
