Circuit and method of forming the circuit having subsurface conductors

   
   

A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.

Транзистор mos и близповерхностные сборники могут быть сформированы путем использование трудной маски и точно менять имплантирует угол, вращение, дозу, и энергию. In this case, определенный атомный вид можно поместить объемно в необходим положении под трудной маской. Dopant можно имплантировать для того чтобы сформировать тома суб-kremni4 произвольных форм, such as трубы, томы, полусферы, и соединяет.

 
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