A resist film is formed from a chemically amplified resist material
including a base polymer having a protecting group released by a function
of an acid, an acrylic compound and an acid generator that generates an
acid when irradiated with light. The resist film is selectively irradiated
with exposing light for pattern exposure, and is developed after the
pattern exposure so as to form a resist pattern having a hole or groove
opening. The size of the opening is reduced by irradiating the resist
pattern with light with annealing.
