The present invention provides a semiconductive substrate which includes
front and back surfaces and a hole which extends through the substrate and
between the front and back surfaces. The hole is defined in part by an
interior wall portion and forms an outer conductive sheath. Conductive
material is formed proximate at least some of the interior wall portion.
Subsequently, a layer of dielectric material is formed within the hole,
over and radially inwardly of the conductive material. A second conductive
material is then formed within the hole over and radially inwardly of the
dielectric material layer. The latter conductive material constitutes an
inner conductive coaxial line component.
La actual invención proporciona un substrato semiconductive que incluya superficies delanteras y traseras y un agujero que extienda a través del substrato y entre el frente y las superficies traseras. El agujero es definido en parte por una porción interior de la pared y forma una envoltura conductora externa. El material conductor es próximo formado por lo menos algo de la porción interior de la pared. Posteriormente, una capa de material dieléctrico se forma dentro del agujero, encima y radialmente interno del material conductor. Un segundo material conductor entonces se forma dentro del agujero encima y radialmente interno de la capa material dieléctrica. El último material conductor constituye una línea coaxial conductora interna componente.
