An InGaN active layer is formed on a sapphire substrate. A p-side electrode
is formed on the InGaN active layer to supply an electric current to this
InGaN active layer. The p-side electrode includes 1 an Ni layer for
forming an ohmic contact with a p-GaN layer, 2 an Mo layer having a
barrier function of preventing diffusion of impurities, 3 an Al layer as a
high-reflection electrode, 4 a Ti layer having a barrier function, and 5
an Au layer for improving the contact with a submount on a lead frame. The
p-side electrode having this five-layered structure realizes an ohmic
contact and high reflectance at the same time.
