A storage capacitor plate for a semiconductor assembly comprising a
substantially continuous porous conductive storage plate comprising
silicon nanocrystals residing along a surface of a conductive material and
along a surface of a coplanar insulative material adjacent the conductive
material, a capacitor cell dielectric overlying the silicon nanocrystals
and an overlying conductive top plate. The conductive storage plate is
formed by a semiconductor fabrication method comprising forming silicon
nanocrystals on a surface of a conductive material and on a surface of an
insulative material adjacent the conductive material, wherein silicon
nanocrystals contain conductive impurities and are adjoined to formed a
substantially continuous porous conductive layer.
