Solid-state imaging device, method for manufacturing the same, and method for driving the same

   
   

In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P.sup.- -type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlayer insulation film interposed therebetween. By applying a negative voltage to the light-blocking film and the transparent conductive film, a P.sup.++ -type inversion region is formed in a topmost part of the N-type photoelectric conversion region.

 
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