Photoresist composition

   
   

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: ##STR1## where R.sup.1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R.sup.2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF.sub.3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R.sup.3 represents hydrogen (H), methyl (CH.sub.3), trifluoromethyl (CF.sub.3), difluoromethyl (CHF.sub.2), fluoromethyl (CH.sub.2 F), or a semi- or perfluorinated aliphatic chain; and where R.sup.4 represents trifluoromethyl (CF.sub.3), difluoromethyl (CHF.sub.2), fluoromethyl (CH.sub.2 F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

 
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