A field-effect transistor that having a nanowire, which forms a source
region, a channel region and a drain region of the field-effect
transistor, the nanowire being a semiconducting and/or metallically
conductive nanowire. The field-effect transistor also has at least one
nanotube, which forms a gate region of the field-effect transistor, the
nanotube being a semiconducting and/or metallically conductive nanotube.
The nanowire and the nanotube are arranged at a distance from one another
or set up in such a manner that it is substantially impossible for there
to be a tunneling current between the nanowire and the nanotube, and that
the conductivity of the channel region of the nanowire can be controlled
by means of a field effect as a result of an electric voltage being
applied to the nanotube.
