Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material

   
   

A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

 
Web www.patentalert.com

< Magnetization sensor for sensing the write field characteristics of a perpendicular or longitudinal recording head

< Spin-valve magnetoresistance sensor and thin-film magnetic head

> Hard disc drive heat sink and sound absorbing frame

> Method of and device for encoding an information stream

~ 00134