Methods of forming quantum dots of Group IV semiconductor materials

   
   

The invention relates to a method of forming a quantum dot. A particle that includes a semiconductor material Y selected from the group consisting of Si and Ge is provided. Sound energy and light energy is applied to the particle to form a quantum dot. The quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent. The quantum dot includes a core, and the core includes Y.

A invenção relaciona-se a um método de dar forma a um ponto do quantum. Uma partícula que inclua um material Y do semicondutor selecionado do grupo que consiste no silicone e no Ge é fornecida. A energia sadia e a energia da luz são aplicadas à partícula para dar forma a um ponto do quantum. O ponto do quantum exibe o photoluminescence com uma eficiência do quantum que seja mais grande de 10 por cento. O ponto do quantum inclui um núcleo, e o núcleo inclui Y.

 
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