A method for forming an etched silicon layer. There is first provided a
first substrate having formed thereover a first silicon layer. There is
then etched the first silicon layer to form an etched first silicon layer
while employing a plasma etch method employing a plasma reactor chamber in
conjunction with a plasma etchant gas composition which upon plasma
activation provides at least one of an active bromine containing etchant
species and an active chlorine containing etchant species. Within the
plasma etch method: (1) a cleaned plasma reactor chamber is seasoned to
provide a seasoned plasma reactor chamber having a seasoning polymer layer
formed therein; (2) the first silicon layer is etched to form the etched
first silicon layer within the seasoned plasma reactor chamber; and (3)
the seasoning polymer layer is cleaned from the seasoned plasma reactor
chamber to provide the cleaned plasma reactor chamber after etching the
first silicon layer to form the etched first silicon layer within the
seasoned plasma reactor chamber, prior to etching a second silicon layer
to form an etched second silicon layer formed over a second substrate
within the plasma reactor chamber while employing the plasma etch method
in accord with (1), (2) and (3).
