Semiconductor devices including a silicon-on-insulator layer
   
   

A semiconductor device in accordance with one example of the present invention pertains to a semiconductor device to be used for a CMOS inverter circuit, comprising a BOX layer 2 formed on a silicon substrate 1, a SOI film 3 including single crystal Si formed on the BOX layer, a gate oxide film 4 formed on the SOI film 3, a gate electrode 5 formed on the gate oxide film, and diffusion layers 7, 8 for source/drain regions formed in source/drain regions of the SOI film 3, wherein, when a power supply voltage of 0.6 V is used, a thickness T.sub.SOI of the SOI film 3 is 0.084 .mu.m or greater and 0.094 .mu.m or smaller, and an impurity concentration of the SOI film is 7.95.times.10.sup.17 /cm.sup.3 or greater and 8.05.times.10.sup.17 /cm.sup.3 or smaller.

 
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