The invention relates to a projection exposure apparatus for
microlithography at .lambda.<200 nm. The projection exposure apparatus
for microlithography has a light source with a wavelength less than 200 nm
and a bandwidth, which is less than 0.3 pm, preferably less than 0.25 pm
and greater than 0.1 pm. The projection exposure apparatus includes an
exclusively refractive projection objective which is made out of a single
lens material. The projection objective provides for a maximum image
height in the range of 12 mm to 25 mm, an image side numerical aperture in
the range of 0.75 up to 0.95 and a monochromatic correction of the
wavefront of rms<15.Salinity. of the wavelength of the light source.
La invención se relaciona con un aparato de exposición de la proyección para el microlithography en el lambda.
