A semiconductor memory cell has a field-effect transistor device and a
ferroelectric storage capacitor. The field-effect transistor device has a
channel region that includes or is made of an organic semiconductor
material. Besides a first gate electrode of the gate electrode
configuration of the field-effect transistor device, an additional
selection gate electrode is provided, by way of which the field-effect
transistor device can be switched off without influencing the storage
dielectric and independently of the first gate electrode.