Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass

   
   

High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a "dry," silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1.times.10.sup.17 molecules/cm.sup.3 of molecular hydrogen and low chlorine levels.

Apropriado de vidro do oxyfluoride do silicone do purity elevado para o uso como carcaças de um photomask para aplicações do photolithography na região do wavelength de VUV abaixo de 190 nm é divulgado com o vidro do oxyfluoride do silicone que tem um índice preferido do fluorine

 
Web www.patentalert.com

< Composites made using functionalized nanoparticles

< Multilayer electrode for a ferroelectric capacitor

> Cholesteric liquid crystal display

> Method of fabricating an optical fiber with microstructures

~ 00129