To provide a semiconductor nonvolatile storage device capable of applying
distributed voltage efficiently to a ferroelectric capacitor in a
semiconductor nonvolatile storage device having an MFMIS structure without
enlarging a memory cell area and a method of fabricating the same, a
ferroelectric nonvolatile storage element is constructed by a structure
successively laminated with a first insulator layer (3), a first conductor
layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a
channel region and is constructed by a structure having a third conductor
(9) and a fourth conductor (10) respectively laminated on a source region
and a drain region, in which the third conductor (9) and the fourth
conductor (10) are opposed to each other via the first conductor layer (4)
and a second insulator thin film (11).
