A magnetoresistance sensor includes a substrate and a sensor structure
deposited upon the substrate and having a first lateral side and a second
lateral side. The sensor structure includes a layered transverse biasing
structure, a free layer deposited upon the layered transverse biasing
structure, and a cap layer deposited upon a central portion of the free
layer but not upon a side portion of the free layer adjacent to each
lateral side. Longitudinal hard biasing structures are disposed laterally
adjacent to the lateral sides of the sensor structure. Each longitudinal
hard biasing structure has a magnetic seed layer deposited upon the
substrate, the respective lateral side of the sensor structure, and the
respective side portion of the free layer. A magnetic hard bias layer is
deposited upon the seed layer.