A photomask designing method and apparatus, a computer readable storing
medium, a photomask, a photoresist, a photosensitive resin, a base plate,
a microlens, and an optical element. In the method, even though a desired
depth of a photoresist pattern and a type of the photoresist are changed,
the photomask can be easily designed. In a method of designing a photomask
in which intensity of light radiated onto the photoresist is controlled
with a fine pattern, that is, a congregation of fine areas respectively
having predetermined light transmission factor, the resist sensitivity
curve showing resist depth for the exposing amount of the employed
photoresist and fine areas data corresponding to plural light transmission
factors per predetermined halftone are previously set, and then, the depth
of the resist respectively set per each of the fine areas is converted to
the light exposing amount by use of the resist sensitivity curve. The
converted exposing amount is further converted to the light transmission
factor. The light transmission factor is replaced by the fine areas data.
In such a way, a concrete fine pattern can be created.
