To improve the efficiency for repairing a defect of an LSI, a semiconductor
integrated circuit device is provided which includes a central processing
unit, an electrically reprogrammable nonvolatile memory and a volatile
memory, sharing a data bus, which utilizes stored information of the
nonvolatile memory to repair a defect of the volatile memory. The volatile
memory includes a volatile storage circuit for latching the repair
information for repairing a defective normal memory cell with a redundancy
memory cell. The nonvolatile memory reads out the repair information from
itself in response to an instruction initialization, and the volatile
storage circuit latches the repair information. A fuse program circuit is
not needed for the detect repair, and a defect which occurs after a
burn-in can be newly repaired so that the new defect can be repaired even
after packaging.
