Disclosed is a method of forming an integrated circuit line on a wafer
using a lithographic technique. The method can include forming a photo
resist line having a line width smaller than a desired line width of the
integrated circuit line. The photo resist line can be reacted with a
coating to form a mask line having a line width corresponding to the
desired line width of the integrated circuit line and with a smaller line
edge roughness (LER) than of the photo resist line.
