In a method of forming a quantum dot having nanometeric size and a method
of forming a gate electrode including the quantum dot, a first layer
including a first material is deposited on the substrate. The first
material has first atoms that are superbundant and bound with the weak
bonding energy in the first layer. A second layer is deposited on the
first layer. The second layer comprises a second material including second
atoms that are capable of migrating into the first atoms. The first atoms
are migrated into the second layer and the second atoms are migrated into
the first layer, so that the second atoms are arranged in the first layer.
Each of the second atoms in the first layer is formed into a quantum dot.
An electrode layer is formed on the first layer after partially etching
the second layer, and then a gate electrode is formed by patterning the
electrode layer. Accordingly, The quantum dot can be formed in the
semiconductor device in such a manner that a size and a distribution of
the quantum dot is easily controlled.
