High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure
   
   

A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.

 
Web www.patentalert.com

< Thin film magnetic head comprising magnetoresistive element having shield layer formed by plating and method of manufacturing the thin film magnetic head

< Releasable disc clamping assembly

> Perpendicular recording head with return poles which reduce flux antenna effect

> Tunneling magnetoresistive element and method of manufacturing the same
~ 00116