Read head sensor with a reactively sputtered pinning layer structure

   
   

A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (Fe.sub.2 O.sub.3) or (Fe.sub.3 O.sub.4). In the preferred embodiment the pinning layer is composed of cobalt (Co) or cobalt iron (CoFe) which is exchange coupled to the iron oxide (Fe.sub.2 O.sub.3) or (Fe.sub.3 O.sub.4) second film of the pinning layer. This structure results in an improved magnetoresistive coefficient (dr/R) which is substantially maintained after annealing so that the magnetic head has good thermal stability when subjected to high temperatures in the presence of a field that is antiparallel to the pinned orientation of the magnetic moment of the pinned layer.

 
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> MAGNETORESISTIVE EFFECTIVE TYPE ELEMENT, THIN FILM MAGNETIC HEAD, MAGNETIC HEAD DEVICE AND MAGNETIC DISK DRIVING DEVICE WHICH USE SAID MAGNETORESISTIVE EFFECTIVE TYPE ELEMENT WHICH INCLUDES AT LEAST THREE SHIELDING FILMS

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