According to a preferred embodiment of the present invention, there is
provided a novel and optimal semiconductor light emitting device
comprising a substrate, an n layer disposed co-extensively on the
substrate, an n.sub.++ layer disposed non-extensively and flush on one
side of the n layer. Furthermore, a p.sup.+ layer is disposed
co-extensively on the n.sub.++ layer of the LED according to the
invention, with a p layer further disposed co-extensively on the p.sub.+
layer. A p cladding layer is disposed co-extensively on the p layer. A
multiple quantum well (MQW) layer is disposed co-extensively on the p
cladding layer, and an n cladding layer is further disposed co-extensively
on the MQW layer. A second n layer is disposed co-extensively on the n
cladding layer. An n.sup.+ layer is disposed co-extensively on the second
n layer of the LED according to the invention. After partially etching the
device, an n electrode is formed opposite n.sup.++ layer non-extensively
on the surface of n layer, and a second n electrode is formed
non-extensively (without etching) upon the n.sup.+ layer.
