Microelectronic device layer deposited with multiple electrolytes

   
   

A microelectronic device (24) is formed by plating a layer of material (36) to fill a cavity (28) formed in a substrate (26). The layer of material has a plurality of regions (42, 44, 46) with respective chemical compositions formed by varying the chemical composition of the plating solution as the layer of material is being deposited. In this manner, expensive additives necessary to achieve desired properties within the cavity may be omitted from the region (46) of overfill that will be removed by a later planarization process.

Un dispositivo microelectrónico (24) es formado plateando una capa del material (36) para llenar una cavidad (28) formada en un substrato (26). La capa de material tiene una pluralidad de las regiones (42, 44, 46) con las composiciones químicas respectivas formadas variando la composición química de la solución de la galjanoplastia mientras que la capa de material se está depositando. De este modo, los añadidos costosos necesarios para alcanzar desearon características dentro de la cavidad se pueden omitir de la región (46) de sobrellenan que será quitada por un proceso más último del planarization.

 
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