Highly polar cleans for removal of residues from semiconductor structures

   
   

Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The Supercritical carbon dioxide may include an ionic liquid in one embodiment.

O dióxido de carbono supercritical pode ser utilizado para remover à esquerda os resíduos resistentes tais como aqueles resíduos ao gravar dielectrics em gáses fluorine-baseados do plasma. O dióxido de carbono supercritical pode incluir um líquido ionic em uma incorporação.

 
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