The register disclosed herein includes a register block and a data writing block having non-volatile storage elements which store data output therefrom. The disclosed register further includes a data restoring block for reading data from the non-volatile storage elements. In a disclosed embodiment, the non-volatile storage elements are magnetic tunnel junction (MTJ) elements.

O registo divulgado nisto inclui um bloco do registo e um bloco da escrita dos dados que têm os elementos permanentes do armazenamento que armazenam a saída de dados therefrom. O registo divulgado inclui mais mais uns dados que restauram o bloco para dados de leitura dos elementos permanentes do armazenamento. Em uma incorporação divulgada, os elementos permanentes do armazenamento são elementos magnéticos da junção do túnel (MTJ).
 
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> Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
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