A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).

Um processo para dar forma a a planarized substancialmente o silicone dieléctrico nanoporous que reveste em uma carcaça apropriada para preparar um dispositivo de semicondutor, e os dispositivos de semicondutor produzidos pelos métodos da invenção. O processo inclui as etapas de aplicar uma composição que inclua ao menos um precursor dieléctrico silicone-baseado a uma carcaça, e então, (a) gelling ou envelhecer o revestimento aplicado, (b) contatando o revestimento com um objeto do planarization com pressão suficiente transferir uma impressão planar ao revestimento sem substancialmente danificar a formação do desejado nanômetro-escalam a estrutura do pore, (c) separar planarized revestir do objeto do planarization, (d) curar-se dito planarized revestir; wherein as etapas (a)-(d) são conduzidas em qualquer das seguintes seqüências: (a), (b), (c) e (d); (a), (d), (b) e (c); (b), (a), (d) e (c); e (b), (c), (a) e (d).

 
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