A method for growing a compound semiconductor includes a first formation step of forming a first group III-V compound layer; a second formation step of forming a second group III-V compound layer including nitrogen and at least one group V element other than nitrogen as a group V composition; and a third formation step of forming a third group III-V compound layer between the first group III-V compound layer and the second group III-V compound layer, the third group III-V compound layer being formed for controlling a reactivity of the second group III-V compound layer with a nitrogen source used in the second formation step.