A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl.sub.2, and about 0% to 99.9% H.sub.2 (hydrogen gas) at temperatures from about 100.degree. C. to about 4,000.degree. C., preferably about 800.degree. C. to about 1,200.degree. C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.

Un processo per la sintesi dei rivestimenti del carbonio sulla superficie dei carburi, preferibilmente di SiC del metallo, incidendo in un idrogeno gassoso alogenato facoltativamente ed e etchant, conducente a (lui formazione di uno strato del carbonio sul carburo del metallo. La reazione รจ effettuata nelle miscele del gas che contengono gli importi di circa 0% (traccia) etchant gassoso alogenato di 100%, per esempio, Cl.sub.2 e circa 0% - 99.9% H.sub.2 (idrogeno) alle temperature circa da 100.degree. C. circa a 4,000.degree. C., preferibilmente circa 800.degree. C. circa a 1,200.degree. C., sopra in qualunque momento gamma, effettuante una pressione di preferibilmente circa un atmosfera, a circa 100 atmosfera.

 
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