A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An aluminum oxide (Al.sub.2 O.sub.3) layer is deposited on top of the semiconductor substrate and then, silicon ions plasma doping is carried out. Thereafter, the Al.sub.2 O.sub.3 layer doped with silicon ions is annealed in the presence of oxygen gas or nitrous oxygen to remove a metallic vacancy in the Al.sub.2 O.sub.3 layer. Subsequently, a conductive layer is formed on top of the Al.sub.2 O.sub.3 layer. Finally, the conductive layer is patterned into the gate structure.

Un método para formar una estructura de la puerta comienza preparando un substrato del semiconductor proporcionado una región del aislamiento formada en esto. Una capa del óxido de aluminio (Al.sub.2 O.sub.3) se deposita encima del substrato del semiconductor y entonces, se realiza el doping del plasma de los iones del silicio. Después de eso, la capa de Al.sub.2 O.sub.3 dopada con los iones del silicio se recuece en la presencia del gas del oxígeno o del oxígeno nitroso para quitar una vacante metálica en la capa de Al.sub.2 O.sub.3. Posteriormente, una capa conductora se forma encima de la capa de Al.sub.2 O.sub.3. Finalmente, la capa conductora está modelada en la estructura de la puerta.

 
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