An MRAM device (100) and method of manufacturing thereof having wordlines (112) that run non-orthogonal relative to bitlines (122), resulting in lower current and power consumption.

Um dispositivo de MRAM (100) e mĂ©todo de manufaturar disso ter os wordlines (112) esse funcionamento non-non-orthogonal relativo aos bitlines (122), tendo por resultado o consumo mais baixo da corrente e da potĂȘncia.

 
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< Magnetic memory device in which influence of adjacent memory cell is controllable

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> Magnetic memory device and magnetic substrate

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