The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.