A reference circuit (132) for an MRAM array, including logic "1" reference MRAM cells (MR.sub.1a) and (MR.sub.1b) coupled in parallel with logic "0" reference MRAM cells (MR.sub.0a) and (MR.sub.0b) The reference current (I.sub.ref)is coupled to a measurement resistor (R.sub.m4) of a sense amplifier (130) which is adapted to determine the logic state of an unknown memory cell MC.sub.u.

Ein Bezugsstromkreis (132) für eine MRAM Reihe, einschließlich Logik "1" Zellen des Bezugs MRAM (MR.sub.1a) und (MR.sub.1b) parallel zu Logik "0" Zellen des Bezugs MRAM (MR.sub.0a) und (MR.sub.0b) den Bezugsstrom (I.sub.ref)is verbunden zu einem Maßwiderstand (R.sub.m4) verbunden eines Richtung Verstärkers (130) der angepaßt wird, um den Logikzustand einer unbekannten Speicherzelle MC.sub.u festzustellen.
 
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