A fully amorphous thin film material that is related to ferroelectric compositions which is grown at low temperature, e.g., below 400.degree. C., to yield a material with voltage independent capacitance, capacitance density of from about 1000 to about 10000 nF/cm.sup.2, leakage of <10.sup.-7 A/cm.sup.2, root mean square roughness <1 nanometer independent of film thickness, and an inverse capacitance that scales as a ratio of film thickness, reflecting uniform dielectric constant throughout the film. The film material may be employed for various capacitor structures, including decoupling capacitors, DRAM storage capacitors, feedthrough capacitors, bypass capacitors, capacitors for RC filters and capacitors for switched capacitor filters.

Een volledig amorf dunne filmmateriaal dat met ferroelectric samenstellingen verwant is wat bij lage temperatuur, b.v., onder 400.degree wordt gekweekt. C., om een materiaal met voltage onafhankelijke capacitieve weerstand, capacitieve weerstandsdichtheid van van ongeveer 1000 aan ongeveer 10000 nF op te brengen/cm.sup.2, lekkage van