A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Um formulation da limpeza do wafer de semicondutor, including o amine orgânico dos wt. 2-98%, 0-50% wt. molha, 0.1-60% peso. agente chelating do composto 1,3-dicarbonyl, peso 0-25%. do agent(s) chelating diferente adicional, 0.5-40% peso. ácido carboxylic nitrogen-containing ou um imine, e solvente orgânico polar do peso 2-98%. Os formulations são úteis remover o resíduo dos wafers que seguem uma etapa ashing do plasma resistir, tal como o resíduo inorgánico dos wafers de semicondutor que contêm o cobre delicado que interconecta estruturas.