A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.

 
Web www.patentalert.com

< (none)

< Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film

> Method and apparatus for cleaning low K dielectric and metal wafer surfaces

> (none)

~ 00021