A light-emitting diode has a GaN-based multi-layer structure arranged on a sapphire substrate. A pair of electrode pads are arranged on a light-output face of the multi-layer structure. The first and second electrode pads have a total projected area set at 25% or less of that of the light-output face. The electrode pads are connected to electrode pads on a mount frame by solder wiring layers arranged on an insulating film covering the side wall of the multi-layer structure.

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