A light-emitting diode has a GaN-based multi-layer structure arranged on a
sapphire substrate. A pair of electrode pads are arranged on a
light-output face of the multi-layer structure. The first and second
electrode pads have a total projected area set at 25% or less of that of
the light-output face. The electrode pads are connected to electrode pads
on a mount frame by solder wiring layers arranged on an insulating film
covering the side wall of the multi-layer structure.